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Dry Etcher

Dry Etcher
LTPS, Oxide

주요특징

  • ICP Source for G2.5~G11
  • Wide process window for all application (LTPS, Oxide TFT)
  • Excellent Etch Rate & Uniformity (Unique antenna design & Zone Control)
  • Excellent productivity (Anti - (ESD, Mura, Dint, ARC))
  • Reliability (high uptime) & technical support

도식화

TFT Applicable Layer Structure
Oxide Contact (SiOx & SiNx)
ESL (SiOx)
LTPS
(P-MOS)
(N-MOS)
(C-MOS)
Poly-Si
Doped PR ashing
Contact (SiOx)
Gate Metal (Mo)
S/D Metal (Mo, Al, Ti)

Dry Etcher
a-SI, LTPS, Oxide

주요특징

  • CCP Source for G2.5~G11
  • Wide process window for all application (a-si TFT, LTPS, Oxide TFT)
  • Excellent productivity (Anti - (ESD, Mura, Dint, ARC))
  • Reliability (high uptime) & technical support

도식화

TFT Applicable Layer Structure
a-Si
[4~5mask]
Active (Island)
N+ (Channel)
Passivation (Contact)
Oxide Contact (SiOx & SiNx)
ESL (SiOx)
LTPS
[P-MOS]
[N-MOS]
[C-MOS]
Poly-Si
Doped PR ashing
Gate Metal [Mo]

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