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Dry Etcher

Dry Etcher
LTPS, Oxide

Key Features

  • ICP Source for G2.5~G11
  • Wide process window for all application (LTPS, Oxide TFT)
  • Excellent Etch Rate & Uniformity (Unique antenna design & Zone Control)
  • Excellent productivity (Anti - (ESD, Mura, Dint, ARC))
  • Reliability (high uptime) & technical support

Specification

TFT Applicable Layer Structure
Oxide Contact (SiOx & SiNx)
ESL (SiOx)
LTPS
(P-MOS)
(N-MOS)
(C-MOS)
Poly-Si
Doped PR ashing
Contact (SiOx)
Gate Metal (Mo)
S/D Metal (Mo, Al, Ti)

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